IQEH54NE2LM7UCGATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil IQEH54NE2LM7UCGATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQEH54NE2LM7UCGATMA1 ISC015N06NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) at Ta 52 A 32 A
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Paket PG-TTFN-9-3 PG-TDSON-8 FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 3 V
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] 90 nC
Rentang Suhu Kerja -55C to +150C (typical MOSFET range) —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: MSL rating] —
Technology — OptiMOS 5 Linear FET 2 (N-Channel)
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Suhu Hubung Kerja — -55 °C to +175 °C
RoHS — Compliant

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