IQEH54NE2LM7UCGATMA1 vs ISC015N06NM5LF2ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQEH54NE2LM7UCGATMA1 sa pamamagitan ng Infineon at ISC015N06NM5LF2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQEH54NE2LM7UCGATMA1 IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 ✓ Nakahanda
Infineon
ISC015N06NM5LF2ATMA1 ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQEH54NE2LM7UCGATMA1 ISC015N06NM5LF2ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) at Ta 52 A 32 A
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Packhaging PG-TTFN-9-3 PG-TDSON-8 FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 3 V
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] 90 nC
Hanay ng Temperature na Operasyon -55C to +150C (typical MOSFET range) —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Technology — OptiMOS 5 Linear FET 2 (N-Channel)
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Temperature ng Junction na Operasyon — -55 °C to +175 °C
RoHS — Compliant

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