IR2010SPBF vs IR2109SPBF Perbandingan

Perbandingan bersamaan detil IR2010SPBF dari Infineon dan IR2109SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2010SPBF IR2109SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (high + low side) —
Number of Drivers 2 (independent high/low-side outputs) 2 (high-side + low-side)
Offset Voltage (max) 200 V —
Peak Source/Sink Current 3 A / 3 A —
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V —
Propagation Delay (typ) 95 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
VCC Supply Voltage (low side) 10 V to 20 V —
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V —
Suhu Kerja -40C to +150C —
Shutdown Feature Yes (active input) —
Paket 16-SOIC (SOIC-16) SOIC-8
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Drive Technology High-speed power MOSFET / IGBT driver —
Channel Matching Matched propagation delays for cross-conduction minimization —
Driver Configuration — Half-Bridge
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Waktu naik — 200 ns
Waktu Menurun — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
Bootstrap Diode — Integrated
Suhu Hubung Kerja — -40 C to +150 C

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