IR2010SPBF vs IR2109SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2010SPBF sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2010SPBF IR2109SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge (high + low side) —
Number of Drivers 2 (independent high/low-side outputs) 2 (high-side + low-side)
Offset Voltage (max) 200 V —
Peak Source/Sink Current 3 A / 3 A —
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V —
Propagation Delay (typ) 95 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
VCC Supply Voltage (low side) 10 V to 20 V —
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V —
Temperature na Operasyon -40C to +150C —
Shutdown Feature Yes (active input) —
Packhaging 16-SOIC (SOIC-16) SOIC-8
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant (Pb-free PBF suffix) Compliant
Drive Technology High-speed power MOSFET / IGBT driver —
Channel Matching Matched propagation delays for cross-conduction minimization —
Driver Configuration — Half-Bridge
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Oras ng Pagtaas — 200 ns
Time ng Pagbaba — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
Bootstrap Diode — Integrated
Temperature ng Junction na Operasyon — -40 C to +150 C

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