IR2109SPBF vs IR2109STRPBF Perbandingan

Perbandingan bersamaan detil IR2109SPBF dari Infineon dan IR2109STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2109SPBF IR2109STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) —
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Waktu naik 200 ns —
Waktu Menurun 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated Integrated
Suhu Hubung Kerja -40 C to +150 C —
Paket SOIC-8 8-SOIC (3.90 mm Width)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-Bridge (High-Side + Low-Side)
Jumlah Output — 2 (High-Side / Low-Side)
High-Side Offset Voltage (Max) — 600 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Suhu Kerja — -40 C to +125 C

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