IR2109SPBF vs IR2109STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2109SPBF disebabkan oleh Infineon dan IR2109STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2109SPBF IR2109STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) —
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Masa Pertambahan 200 ns —
Masa jatuh 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated Integrated
Suhu Hubungan Operasi -40 C to +150 C —
Kemasan SOIC-8 8-SOIC (3.90 mm Width)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-Bridge (High-Side + Low-Side)
Bilangan Output — 2 (High-Side / Low-Side)
High-Side Offset Voltage (Max) — 600 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Suhu Operasi — -40 C to +125 C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga