IR2109SPBF vs IR2153PBF Perbandingan

Perbandingan bersamaan detil IR2109SPBF dari Infineon dan IR2153PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2109SPBF IR2153PBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) 2 (high-side and low-side)
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Waktu naik 200 ns —
Waktu Menurun 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) Increased threshold (per datasheet)
Bootstrap Diode Integrated —
Suhu Hubung Kerja -40 C to +150 C —
Paket SOIC-8 8-PDIP (0.300 inch, 7.62 mm)
Tipe Mounting Surface Mount Through-Hole
Status RoHS Compliant Pb-Free, RoHS compliant
Product Type — Half-Bridge Gate Driver IC
Topologi — Self-oscillating half-bridge with integrated RC oscillator
High-Side Voltage Rating — 600 V
VCC Supply Voltage — 10 V to 15.6 V (zener clamped)
VCC Zener Clamp — 15.6 V
Quiescent Current (Micropower Startup) — 500 uA
Rise Time (typ.) — 45 ns
Fall Time (typ.) — 80 ns
Shutdown Feature — Yes (1/6 VCC on CT pin)
Deadtime Control — Internal, tighter initial tolerance, low temperature coefficient
Suhu Kerja — -40C to +125C

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