IR2117STRPBF vs IR2117SPBF Perbandingan

Perbandingan bersamaan detil IR2117STRPBF dari Infineon dan IR2117SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2117STRPBF IR2117SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side Single Channel Single high-side driver
Fungsi Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
Jumlah Output 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
Waktu naik 80 ns (typ) —
Waktu Menurun 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes Yes
Negative Transient Voltage Tolerance Yes, dV/dt immune —
Rentang Suhu Kerja -40 C to +125 C —
Paket / Case 8-SOIC (0.154 inch / 3.90 mm width) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (PbF suffix)
Lead-Free Yes —
Level MSL MSL3 (per JEDEC J-STD-020) —
Driver Type — High-side gate driver (non-inverting)
Number of Drivers — 1
Maximum Offset (Bootstrap) Voltage — 600 V
Output Current (Source, typ.) — 0.25 A
Output Current (Sink, typ.) — 0.5 A
Gate Drive Supply Voltage (VBS) — 10 V to 20 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — CMOS Schmitt-triggered with internal pull-down
Logic Input Polarity — Non-inverting
Bootstrap Operation — Yes (floating channel)
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes
Paket — 8-SOIC (SOIC-8)
Suhu Kerja — -40C to +125C
Lead Finish — Lead-free (PbF)
Family — IR2117 / IR2118 series

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