IR2117STRPBF vs IR2117SPBF 比較

詳細並排比較 IR2117STRPBF 由 Infineon 與 IR2117SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2117STRPBF IR2117SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side Single Channel Single high-side driver
功能 Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
輸出數量 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
上升時間 80 ns (typ) —
下降時間 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes Yes
Negative Transient Voltage Tolerance Yes, dV/dt immune —
工作溫度範圍 -40 C to +125 C —
封裝 / 外殼 8-SOIC (0.154 inch / 3.90 mm width) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant (PbF suffix)
Lead-Free Yes —
MSL 等級 MSL3 (per JEDEC J-STD-020) —
Driver Type — High-side gate driver (non-inverting)
Number of Drivers — 1
Maximum Offset (Bootstrap) Voltage — 600 V
Output Current (Source, typ.) — 0.25 A
Output Current (Sink, typ.) — 0.5 A
Gate Drive Supply Voltage (VBS) — 10 V to 20 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — CMOS Schmitt-triggered with internal pull-down
Logic Input Polarity — Non-inverting
Bootstrap Operation — Yes (floating channel)
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes
封裝 — 8-SOIC (SOIC-8)
工作溫度 — -40C to +125C
Lead Finish — Lead-free (PbF)
Family — IR2117 / IR2118 series

資料表與資源

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