IRF4905STRLPBF vs IRF4905STRRPBF Perbandingan
Perbandingan bersamaan detil IRF4905STRLPBF dari Infineon dan IRF4905STRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905STRLPBF | IRF4905STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263) | D2PAK (TO-263-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET (Advanced Process) |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |