IRF4905STRRPBF vs IRF4905SPBF Perbandingan
Perbandingan bersamaan detil IRF4905STRRPBF dari Infineon dan IRF4905SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905STRRPBF | IRF4905SPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | -55 C to +150 C |
| Paket | D2PAK (TO-263-3) | D2PAK (TO-263) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET, planar cell |
| Status RoHS | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Qualification | — | JEDEC standard |