IRF4905STRRPBF vs IRF4905SPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905STRRPBF disebabkan oleh Infineon dan IRF4905SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF4905STRRPBF | IRF4905SPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55 C to +150 C |
| Kemasan | D2PAK (TO-263-3) | D2PAK (TO-263) surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET, planar cell |
| Status RoHS | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Qualification | — | JEDEC standard |