IRF5305STRLPBF vs IRFS4010TRLPBF Perbandingan

Perbandingan bersamaan detil IRF5305STRLPBF dari Infineon dan IRFS4010TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF5305STRLPBF IRFS4010TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A 180 A
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] —
RDS(on) max at VGS=-10V 60 mOhm —
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) 143 nC
Maximum Power Dissition at Tc 110 W —
Maximum Power Dissipation at TA 3.8 W —
Paket TO-263 / D2PAK (surface mount) D2PAK (TO-263AB), surface mount
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating range] —
Technology HEXFET (fifth generation), IR MOSFET IR MOSFET (HEXFET)
Packaging Tape & Reel (TR), 800 pcs per reel —
Lead-Free / RoHS Yes (Pb-free suffix PBF) —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 100 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
Suhu Hubung Kerja — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
Status RoHS — Compliant
Level MSL — 1
Qualification — JEDEC standard

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