IRF5305STRLPBF vs IRFS4010TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF5305STRLPBF sa pamamagitan ng Infineon at IRFS4010TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Nakahanda
Infineon
IRFS4010TRLPBF IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF5305STRLPBF IRFS4010TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A 180 A
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] —
RDS(on) max at VGS=-10V 60 mOhm —
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) 143 nC
Maximum Power Dissition at Tc 110 W —
Maximum Power Dissipation at TA 3.8 W —
Packhaging TO-263 / D2PAK (surface mount) D2PAK (TO-263AB), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj max / operating range] —
Technology HEXFET (fifth generation), IR MOSFET IR MOSFET (HEXFET)
Packaging Tape & Reel (TR), 800 pcs per reel —
Lead-Free / RoHS Yes (Pb-free suffix PBF) —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 100 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
Temperature ng Junction na Operasyon — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
Tindminan RoHS — Compliant
Level ng MSL — 1
Qualification — JEDEC standard

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