IRF640NSTRLPBF vs IRFZ24NPBF Perbandingan
Perbandingan bersamaan detil IRF640NSTRLPBF dari Infineon dan IRFZ24NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF640NSTRLPBF | IRFZ24NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) | HEXFET planar cell |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 44.7 nC | 13.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Rentang Suhu Hubung Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) | TO-220AB (through hole) |
| Tipe Mounting | Surface Mount (Tape and Reel) | Through Hole |
| Lead-Free (PbF) | Yes | — |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |