IRF640NSTRLPBF vs IRFZ24NPBF Comparison
Detailed side-by-side comparison of IRF640NSTRLPBF by Infineon and IRFZ24NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NSTRLPBF | IRFZ24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) | HEXFET planar cell |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 44.7 nC | 13.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Operating Junction Temperature Range | -55C to +175C | — |
| Package | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) | TO-220AB (through hole) |
| Mounting Type | Surface Mount (Tape and Reel) | Through Hole |
| Lead-Free (PbF) | Yes | — |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Operating Junction Temperature | — | -55C to +175C |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |