IRF7103TRPBF vs IRF7854TRPBF Perbandingan
Perbandingan bersamaan detil IRF7103TRPBF dari Infineon dan IRF7854TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7103TRPBF | IRF7854TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7103TRPBF | — |
| FET Type | Dual N-Channel | N-Channel |
| Configuration | Common Source, Dual Die | — |
| Drain-to-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 3 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | — |
| On-Resistance RDS(on) typ | 0.11 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Rentang Suhu Kerja | -55C to +150C (TJ) | -55°C to +150°C (TJ) |
| Paket | SO-8 (PG-DSO-8-902) | SO-8 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (HEXFET equivalent) | HEXFET (planar N-channel) |
| Soldering Method | Vapour phase, infrared, wave soldering | — |
| Level MSL | 1 | — |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | — |
| Status RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |