IRF7103TRPBF vs IRF7854TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7103TRPBF sa pamamagitan ng Infineon at IRF7854TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7103TRPBF IRF7854TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7103TRPBF —
FET Type Dual N-Channel N-Channel
Configuration Common Source, Dual Die —
Drain-to-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] —
On-Resistance RDS(on) max 130 mOhm @ VGS=10V —
On-Resistance RDS(on) typ 0.11 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Power Dissipation (PD) 2 W —
Hanay ng Temperature na Operasyon -55C to +150C (TJ) -55°C to +150°C (TJ)
Packhaging SO-8 (PG-DSO-8-902) SO-8
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR MOSFET™ (HEXFET equivalent) HEXFET (planar N-channel)
Soldering Method Vapour phase, infrared, wave soldering —
Level ng MSL 1 —
Lead-Free Yes (Pb-free per TRPBF suffix) —
Tindminan RoHS Compliant —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

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