IRF7205PBF vs IRFR9024NTRLPBF Perbandingan

Perbandingan bersamaan detil IRF7205PBF dari Infineon dan IRFR9024NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7205PBF IRFR9024NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (ID) -4.6 A —
On-Resistance RDS(on) max at VGS=-10V 70 mOhm 175 mOhm
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology IR MOSFET (HEXFET, planar cell) HEXFET (Generation 5)
Paket SO-8 —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +175C
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] —
Switching Frequency Optimization Below 100 kHz —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free per PBF suffix) —
Generation Fourth Generation HEXFET —
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at TC=25C — -11 A
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
Jumlah Pin — 3 (Drain, Gate, Source + Tab)
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon