IRF7205PBF vs IRFR9024NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7205PBF disebabkan oleh Infineon dan IRFR9024NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7205PBF IRFR9024NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (ID) -4.6 A —
On-Resistance RDS(on) max at VGS=-10V 70 mOhm 175 mOhm
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology IR MOSFET (HEXFET, planar cell) HEXFET (Generation 5)
Kemasan SO-8 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +175C
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] —
Switching Frequency Optimization Below 100 kHz —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free per PBF suffix) —
Generation Fourth Generation HEXFET —
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at TC=25C — -11 A
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
Kiraan Pin — 3 (Drain, Gate, Source + Tab)
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

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