IRF7205PBF vs IRFR9024NTRLPBF 比較

詳細並排比較 IRF7205PBF 由 Infineon 與 IRFR9024NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 啟用中

規格比較

參數 IRF7205PBF IRFR9024NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (ID) -4.6 A —
On-Resistance RDS(on) max at VGS=-10V 70 mOhm 175 mOhm
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology IR MOSFET (HEXFET, planar cell) HEXFET (Generation 5)
封裝 SO-8 —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 C to +150 C (junction) -55C to +175C
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] —
Switching Frequency Optimization Below 100 kHz —
Qualification JEDEC standard —
RoHS 狀態 Compliant (Pb-free per PBF suffix) —
Generation Fourth Generation HEXFET —
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at TC=25C — -11 A
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
腳位數 — 3 (Drain, Gate, Source + Tab)
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

資料表與資源

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