IRF7854TRPBF vs IPT012N08NF2SATMA1 Perbandingan
Perbandingan bersamaan detil IRF7854TRPBF dari Infineon dan IPT012N08NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7854TRPBF | IPT012N08NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,48 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | PG-HSOF-8-10 (HSOF) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | Trench MOSFET (OptiMOS-derived) |
| Rentang Suhu Kerja | -55°C to +150°C (TJ) | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT012N08NF2SATMA1 |
| Product Family | — | StrongIRFET™ |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Ta | — | 39 A |
| Pulsed Drain Current (IDM) at Tc | — | 351 A |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.2 mΩ |
| Gate Threshold Voltage (VGS(th)) Max | — | 3.8 V |
| Power Dissipation (PD) at Ta | — | 3.8 W |
| Power Dissipation (PD) at Tc | — | 300 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Pin Count (incl. tab) | — | 9 pins (8+tab) |
| Status RoHS | — | Compliant |
| Packing | — | Tape & Reel (T/R) |