IRF8736TRPBF vs IRFR5305TRPBF Perbandingan
Perbandingan bersamaan detil IRF8736TRPBF dari Infineon dan IRFR5305TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF8736TRPBF | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | StrongIRFET / HEXFET | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | -55 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Power Dissipation (PD) Max at TA=25C | 2.5 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 4.8 mOhm at VGS = 10V | — |
| Gate Charge (Qg) Typical | 17 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | -2 V to -4 V |
| Paket | SO-8 (8-SO, MS-012AA) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +175 C |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes (fully characterized avalanche voltage) | — |
| Configuration | Single | — |
| Packaging | Tape & Reel (TRPBF suffix) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |