IRF8736TRPBF vs IRFR5305TRPBF 比較

詳細並排比較 IRF8736TRPBF 由 Infineon 與 IRFR5305TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRF8736TRPBF IRFR5305TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V -55 V
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] -2 V to -4 V
封裝 SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) -55 C to +175 C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等級 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
RoHS 狀態 — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

資料表與資源

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