IRF8736TRPBF vs IRFR5305TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF8736TRPBF disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF8736TRPBF IRFR5305TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V -55 V
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] -2 V to -4 V
Kemasan SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +175 C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Aras MSL 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Status RoHS — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

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