IRFB4310PBF vs IRF3710STRLPBF Perbandingan
Perbandingan bersamaan detil IRFB4310PBF dari Infineon dan IRF3710STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB4310PBF | IRF3710STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | — |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 170 nC | 86.7 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 C to +175 C |
| Paket | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| Tipe Mounting | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25 C) | — | 57 A |
| On-Resistance RDS(on) max | — | 23 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | — | 200 W |
| Tape & Reel Orientation | — | TRL (left) |