IRFB4310PBF vs IRF3710STRLPBF 比較
詳細並排比較 IRFB4310PBF 由 Infineon 與 IRF3710STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4310PBF | IRF3710STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | — |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 170 nC | 86.7 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| 工作溫度範圍 | -55C to +175C (junction) | -55 C to +175 C |
| 封裝 | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| 安裝類型 | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25 C) | — | 57 A |
| On-Resistance RDS(on) max | — | 23 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | — | 200 W |
| Tape & Reel Orientation | — | TRL (left) |