IRFB4310PBF vs IRF3710STRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFB4310PBF tarafından Infineon ve IRF3710STRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFB4310PBF | IRF3710STRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | — |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 170 nC | 86.7 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | -55 C to +175 C |
| Paket | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| Montaj Türü | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| RoHS Durumu | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25 C) | — | 57 A |
| On-Resistance RDS(on) max | — | 23 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | — | 200 W |
| Tape & Reel Orientation | — | TRL (left) |