IRFB4410PBF vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IRFB4410PBF dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB4410PBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) - HEXFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C 88 A (Tc) —
Continuous Drain Current (Id) @ 100C [DATA_NEEDED: Id @ 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulse] —
Gate-to-Source Voltage (Vgs) [DATA_NEEDED: Vgs max] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
RDS(on) max @ VGS=10V 10 mOhm —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (Pd) 200 W (Tc) —
Rentang Suhu Kerja -55C to +175C (Tj) —
Paket TO-220AB (through-hole) TO-220AB (3-lead through-hole)
Tipe Mounting Through Hole Through Hole
Avalanche Energy Rating Single-pulse avalanche rated —
Level MSL 1 (unlimited) N/A (through-hole)
Status RoHS Compliant (Pb-free PBF suffix) —
Series HEXFET HEXFET
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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