IRFH7084TRPBF vs STL140N4F7AG Perbandingan

Perbandingan bersamaan detil IRFH7084TRPBF dari Infineon dan STL140N4F7AG dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

STMicroelectronics
STL140N4F7AG STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFH7084TRPBF STL140N4F7AG
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET™ (trench MOSFET) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A —
Silicon-Limited Drain Current 265 A —
Power Dissipation (PD, Tc=25°C) 156 W —
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ —
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V —
Input Capacitance (Ciss) max @ 25V 6560 pF —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55°C to +175°C
Paket 8-PQFN 5x6 mm (SuperSO8) PowerFLAT 5x6
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant —
Bebas Halogen Compliant —
RthJC max 0.96 °C/W (per datasheet) —
Polarity — N-Channel
Continuous Drain Current (ID) — 140 A
On-State Resistance (RDS(on)) — 3.2 mOhm @ VGS=10V
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V (min)
Total Gate Charge (Qg) — 60 nC
Input Capacitance (Ciss) — 4500 pF
Output Capacitance (Coss) — 800 pF
Reverse Transfer Capacitance (Crss) — 150 pF
Power Dissipation (PD) — 150 W
AEC-Q101 Qualified — Yes
RoHS Compliant — Yes

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