IRFL014NTRPBF vs IRF7832TRPBF Perbandingan

Perbandingan bersamaan detil IRFL014NTRPBF dari Infineon dan IRF7832TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFL014NTRPBF IRF7832TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
Rentang Suhu Kerja -55 C to +150 C (junction) -55 C to +150 C (TJ)
Paket SOT-223 (TO-261-4), 4-pin (3 + tab) 8-SO (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant —
Level MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Technology HEXFET (planar N-channel, fifth generation) HEXFET (trench MOSFET)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7832TRPBF
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 20 A
On-Resistance RDS(on) max at VGS=10V — 4.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typical — 1.0 V to 2.5 V
Total Gate Charge (Qg) typical — 34 nC
Power Dissipation (PD) at TA=25C — 2.5 W
Status RoHS — Compliant
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon