IRFL014NTRPBF vs IRF7832TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFL014NTRPBF disebabkan oleh Infineon dan IRF7832TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFL014NTRPBF | IRF7832TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 C | 1.9 A | — |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 160 milliohm | — |
| Gate Charge (Qg) typical | 7 nC | — |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55 C to +150 C (TJ) |
| Kemasan | SOT-223 (TO-261-4), 4-pin (3 + tab) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Yes (dynamic dv/dt rated) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Aras MSL | Level 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | HEXFET (planar N-channel, fifth generation) | HEXFET (trench MOSFET) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |