IRFL014NTRPBF vs IRFR5305TRLPBF Perbandingan

Perbandingan bersamaan detil IRFL014NTRPBF dari Infineon dan IRFR5305TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFL014NTRPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
Rentang Suhu Kerja -55 C to +150 C (junction) —
Paket SOT-223 (TO-261-4), 4-pin (3 + tab) TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant Yes (Pb-free, suffix "PBF")
Level MSL Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) HEXFET fifth-generation planar MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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