IRFL014NTRPBF vs IRFR5305TRLPBF 比較

詳細並排比較 IRFL014NTRPBF 由 Infineon 與 IRFR5305TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFL014NTRPBF IRFR5305TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
工作溫度範圍 -55 C to +150 C (junction) —
封裝 SOT-223 (TO-261-4), 4-pin (3 + tab) TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant Yes (Pb-free, suffix "PBF")
MSL 等級 Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) HEXFET fifth-generation planar MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
工作接面溫度 — -55C to +175C
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

資料表與資源

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