IRFL014NTRPBF vs IRFR5305TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFL014NTRPBF sa pamamagitan ng Infineon at IRFR5305TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IRFL014NTRPBF | IRFR5305TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 C | 1.9 A | — |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 160 milliohm | — |
| Gate Charge (Qg) typical | 7 nC | — |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | — |
| Packhaging | SOT-223 (TO-261-4), 4-pin (3 + tab) | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | Yes (fully avalanche rated) |
| dv/dt Rating | Yes (dynamic dv/dt rated) | — |
| Lead-Free / RoHS | Yes / Compliant | Yes (Pb-free, suffix "PBF") |
| Level ng MSL | Level 1 (per JEDEC J-STD-020) | — |
| Technology | HEXFET (planar N-channel, fifth generation) | HEXFET fifth-generation planar MOSFET |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |