IRFL014NTRPBF vs IRFR5305TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFL014NTRPBF disebabkan oleh Infineon dan IRFR5305TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFL014NTRPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
Gambaran Suhu Operasi -55 C to +150 C (junction) —
Kemasan SOT-223 (TO-261-4), 4-pin (3 + tab) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant Yes (Pb-free, suffix "PBF")
Aras MSL Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) HEXFET fifth-generation planar MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubungan Operasi — -55C to +175C
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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