IRFP260MPBF vs IRFP2907PBF Perbandingan

Perbandingan bersamaan detil IRFP260MPBF dari Infineon dan IRFP2907PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP260MPBF IRFP2907PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
Rentang Suhu Kerja -55C to +175C —
Paket / Case TO-247AC (3-lead through-hole) —
Tipe Mounting Through Hole —
Status RoHS Compliant —
Lead-Free Yes Yes
Avalanche Rated Yes Yes (repetitive avalanche rated)
Level MSL Not Applicable (through-hole) —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Jumlah Pin — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

Spek dan Sumber

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