IRFP260MPBF vs IRFP2907PBF Comparison

Detailed side-by-side comparison of IRFP260MPBF by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP260MPBF IRFP2907PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.85 $2.45
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide Semiconductor) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) at Tc=25C 50 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
Power Dissipation (PD) at Tc=25C 300 W β€”
On-Resistance RDS(on) max 40 mOhm β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] β€”
Input Capacitance Ciss 1560 pF β€”
Total Gate Charge Qg [DATA_NEEDED: Qg] β€”
Operating Temperature Range -55C to +175C β€”
Package / Case TO-247AC (3-lead through-hole) β€”
Mounting Type Through Hole β€”
RoHS Status Compliant β€”
Lead-Free Yes Yes
Avalanche Rated Yes Yes (repetitive avalanche rated)
MSL Level Not Applicable (through-hole) β€”
Part Number β€” IRFP2907PBF
Drain-to-Source Voltage (V_DSS) β€” 75 V
Continuous Drain Current (I_D) at T_C = 25 C β€” 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) β€” 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C β€” 470 W
Total Gate Charge (Q_g) β€” 410 nC
Maximum Junction Operating Temperature β€” +175 C
Package / Mounting Type β€” TO-247AC (Through Hole)
Pin Count β€” 3 (Gate, Drain, Source)
RoHS Compliance β€” Yes (Pb-free)
Body Diode β€” Integral (no external anti-parallel diode required)

Datasheets & Resources

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