IRFP260MPBF vs IRFP2907PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP260MPBF sa pamamagitan ng Infineon at IRFP2907PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP260MPBF IRFP2907PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging / Kaso TO-247AC (3-lead through-hole) —
Uri ng Pagpapasok Through Hole —
Tindminan RoHS Compliant —
Lead-Free Yes Yes
Avalanche Rated Yes Yes (repetitive avalanche rated)
Level ng MSL Not Applicable (through-hole) —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Bilang ng Pin — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

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