IRFP260MPBF vs IRFP2907PBF 比較

詳細並排比較 IRFP260MPBF 由 Infineon 與 IRFP2907PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFP260MPBF IRFP2907PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
工作溫度範圍 -55C to +175C —
封裝 / 外殼 TO-247AC (3-lead through-hole) —
安裝類型 Through Hole —
RoHS 狀態 Compliant —
Lead-Free Yes Yes
Avalanche Rated Yes Yes (repetitive avalanche rated)
MSL 等級 Not Applicable (through-hole) —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
腳位數 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價