IRFP2907PBF vs IRF7769L1TRPBF Perbandingan

Perbandingan bersamaan detil IRFP2907PBF dari Infineon dan IRF7769L1TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP2907PBF IRF7769L1TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (IR MOSFET)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Jumlah Pin 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) Compliant
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Polarity — N-Channel
VDS (Drain-Source Voltage) — 100 V
VGS (Gate-Source Voltage) — ±20 V
Continuous Drain Current (TA=25C) — 20 A
Continuous Drain Current (TC=25C) — 124 A
Arus Kedip Pengecor — 142 A
Power Dissipation (TA=25C) — 3.3 W
Power Dissipation (TC=25C) — 125 W
RDS(on) max at VGS=10V — 3.5 mOhm
RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Total Gate Charge Qg — 200 nC
Paket — DirectFET Isometric L8
Package Profile — 0.7 mm
Tipe Mounting — Surface Mount
Rentang Suhu Kerja — -55C to +150C (TJ)
Level MSL — 1
Lead-Free Reflow — 260C qualified
Bebas Halogen — Yes

Spek dan Sumber

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