IRFP2907PBF vs IRF7769L1TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP2907PBF disebabkan oleh Infineon dan IRF7769L1TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP2907PBF IRF7769L1TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (IR MOSFET)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Kiraan Pin 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) Compliant
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Polarity — N-Channel
VDS (Drain-Source Voltage) — 100 V
VGS (Gate-Source Voltage) — ±20 V
Continuous Drain Current (TA=25C) — 20 A
Continuous Drain Current (TC=25C) — 124 A
Arus Alir Gesa — 142 A
Power Dissipation (TA=25C) — 3.3 W
Power Dissipation (TC=25C) — 125 W
RDS(on) max at VGS=10V — 3.5 mOhm
RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Total Gate Charge Qg — 200 nC
Kemasan — DirectFET Isometric L8
Package Profile — 0.7 mm
Jenis Pemasangan — Surface Mount
Gambaran Suhu Operasi — -55C to +150C (TJ)
Aras MSL — 1
Lead-Free Reflow — 260C qualified
Boson Bebas — Yes

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