IRFR024NTRPBF vs IRFR3710ZTRLPBF Perbandingan

Perbandingan bersamaan detil IRFR024NTRPBF dari Infineon dan IRFR3710ZTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR024NTRPBF IRFR3710ZTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Tipe Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), 3-pin (2+tab)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Level MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), HEXFET
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — 69 nC
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
Suhu Kerja — -55 C to +175 C (TJ)
Status RoHS — Compliant (Pb-free PBF suffix)

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