IRFR024NTRPBF vs IRFR3710ZTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR024NTRPBF disebabkan oleh Infineon dan IRFR3710ZTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR024NTRPBF IRFR3710ZTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Jenis Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), 3-pin (2+tab)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Aras MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), HEXFET
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — 69 nC
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
Suhu Operasi — -55 C to +175 C (TJ)
Status RoHS — Compliant (Pb-free PBF suffix)

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