IRFR220NTRLPBF vs IRLR120NTRPBF Perbandingan
Perbandingan bersamaan detil IRFR220NTRLPBF dari Infineon dan IRLR120NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR220NTRLPBF | IRLR120NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | 10 A |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed Idm] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 13.3 nC |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | 48 W |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +175C (junction) |
| Paket | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | TO-252AA (DPAK), 3-pin surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant (Pb-free PBF suffix) | — |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | — |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET (Fifth Generation, planar) |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max at Vgs=10V | — | 185 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Avalanche Energy Rating | — | Fully avalanche rated |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |