IRFR220NTRLPBF vs IRLR120NTRPBF 比較

詳細並排比較 IRFR220NTRLPBF 由 Infineon 與 IRLR120NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 啟用中
Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 啟用中

規格比較

參數 IRFR220NTRLPBF IRLR120NTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A 10 A
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed Idm]
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 13.3 nC
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W 48 W
工作溫度範圍 -55C to +150C (junction) -55C to +175C (junction)
封裝 TO-252AA (DPAK), 2 Leads + Tab, SC-63 TO-252AA (DPAK), 3-pin surface mount
安裝類型 Surface Mount Surface Mount
MSL 等級 1 1
RoHS 狀態 Compliant (Pb-free PBF suffix) —
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) —
Technology Family HEXFET, Planar, Generation 3 —
FET Type — N-Channel MOSFET
Technology — HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

資料表與資源

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