IRFR220NTRLPBF vs IRLR120NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NTRLPBF disebabkan oleh Infineon dan IRLR120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR220NTRLPBF IRLR120NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A 10 A
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed Idm]
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 13.3 nC
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W 48 W
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +175C (junction)
Kemasan TO-252AA (DPAK), 2 Leads + Tab, SC-63 TO-252AA (DPAK), 3-pin surface mount
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1
Status RoHS Compliant (Pb-free PBF suffix) —
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) —
Technology Family HEXFET, Planar, Generation 3 —
FET Type — N-Channel MOSFET
Technology — HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

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