IRFR2405TRPBF vs IRFR9120NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR2405TRPBF dari Infineon dan IRFR9120NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR2405TRPBF IRFR9120NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET fifth-generation IR MOSFET
Drain-Source Voltage (VDS) 55 V -100 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 18 nC (typical)
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Level MSL 1 1 (unlimited floor life)
Status RoHS Compliant (Lead-Free PBF suffix) Compliant
Bebas Halogen [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — -6.6 A
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Continuous Power Dissipation (PD) at TC=25C — 40 W
Rentang Suhu Hubung Kerja — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon