IRFR2405TRPBF vs IRFR9120NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRPBF disebabkan oleh Infineon dan IRFR9120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR2405TRPBF IRFR9120NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET fifth-generation IR MOSFET
Drain-Source Voltage (VDS) 55 V -100 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 18 nC (typical)
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) + Tab —
Aras MSL 1 1 (unlimited floor life)
Status RoHS Compliant (Lead-Free PBF suffix) Compliant
Boson Bebas [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — -6.6 A
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Continuous Power Dissipation (PD) at TC=25C — 40 W
Gambaran Suhu Hubungan Operasi — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

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