IRFR2405TRPBF vs IRLTS2242TRPBF Perbandingan

Perbandingan bersamaan detil IRFR2405TRPBF dari Infineon dan IRLTS2242TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR2405TRPBF IRLTS2242TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 55 V -20 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typ/min/max]
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) TSOP-6 (Micro 6)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Level MSL 1 MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant (Lead-Free PBF suffix) Compliant
Bebas Halogen [DATA_NEEDED: halogen-free status] Yes
Avalanche Rated Yes (100% avalanche tested) —
Polarity — P-Channel
Continuous Drain Current (ID) at TA=25C — -6.9 A
Power Dissipation (PD) at TA=25C — 2.0 W
On-Resistance RDS(on) max at VGS=-10V — 32 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS absolute max]
Gate Drive Voltage (logic level) — 4.5 V (fully enhanced), 2.5 V capable
Rentang Suhu Kerja — -55C to +150C (junction)
Package Thermal Resistance (RthJA) — [DATA_NEEDED: RthJA on 1 inch FR-4 PCB]
Lead-Free — Yes

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